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�� �y(c��)���ضȷ���: -30��600��
�� ���xϵ��(sh��): D��S=33��1
�� ��W(xu��)ϵ: SILICON�R�^
�� �z������: THERMOPILE
�� �z�y(c��)�t�Ⲩ�L: 8��14um
�� 푑�(y��ng)�r(sh��)�g: 0.5sec/90%
�� �y(c��)������: -30-0 ±3�� 0.1-200 ±2�� 201-600 ±1%
�� �٬F(xi��n)��: �xȡֵ±1��
�� �ֱ���: -30.0-199.9 ��0.1�� 200-600��1��
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�� �Դ: 5̖(h��o)��AA��늳�2��(ji��)
�� 늳؉���: �s15С�r(sh��)
�� ʹ�íh(hu��n)���ض�: 0��50��
�� ʹ�íh(hu��n)�����: 35��85%RH
�� ����ضȷ���: -10��60��
�� ����: 250g
�� ���γߴ�: H×W×D=182×56×38m