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���c�� ݗ�նȺ�ݗ���Ȝy�� ������ʽ�OӋ ���� �w�eС ���÷����V ���ȸ� �՚��ˮ��У�� ģ�K��ϵ�y(t��ng) ���µļ{��Ϳ�Ӽ��g ���ã� ���V�����ھ��B�m(x��)�O(ji��n)�y �l(w��i)�ǔ�����C--�l(w��i)�ǔ����ĵ��挍�C ����W--����,�����⌦�����Ӱ� �������--�ڲ�ͬ���V�l��ֲ�����L�о� �ɫ�y�� ���W--����о� ˮɫ�b�� �����y����͡��ռ�����͵Ȳ�ͬ,��ԓϵ�пɷֳ����: ��һ� RAMSES-ARC �߹��VUV-VIS ݗ���Ȃ����� ������ field of view: 7° in air ���L: 320 - 950 nm �z�y��: 256 ͨ����Ĥ������ ���V�ɘ�: 3.3nm/pixel ���V����: 0.3nm ���Hʹ��ͨ��: 190 ����Ͷ�(at 200nm): 1wm-2 nm-1 sr -1 �ڶ�� RAMSES-ACC-VIS �߹��VUV-VIS ����ݗ�նȂ����� ������ �ռ�����ͣ����ҙz�y�� ���L: 320 - 950 nm �z�y��: 256 channel silicon photodiode array ���V�ɘ�: 3.3nm/pixel ���V����: 0.3nm ���Hʹ��ͨ��: 190 ����Ͷ�(4 ms integration time): 10 W m-2 nm-1 (at 400nm) 8 W m-2 nm-1 (at 500nm) 14 W m-2 nm-1 (at 700nm) ����NEI(8 sec integration time): 0.4 µW m-2 nm-1 (at 400nm) 0.4 µW m-2 nm-1 (at 500nm) 0.6 µW m-2 nm-1 (at 700nm) ����� RAMSES-ACC-UV �߹��V��������ݗ�նȂ����� ������ �ռ������: ���ҙz�y�� ���L: 280 - 500 nm �z�y��: 256 ͨ����������O����� ���V�ɘ�: 2.2 nm/pixel ���V����: 0.2 nm ���Hʹ��ͨ��: 100 ����Ͷ�(4ms integration time): 20 W m-2 nm-1 sr -1 (at 300nm) 17 W m-2 nm-1 sr -1 (at 360nm) 18W m-2 nm-1 sr -1 (at 500nm) ����NEI(8ms integration time): 0.85 µW m-2 nm-1 sr -1 (at 300nm) 0.75 µW m-2 nm-1 sr -1 (at 360nm) 0.80 µW m-2 nm-1 sr -1 (at 500nm) ����� RAMSES-ASC-VIS �߹��VUV-VIS Scalarݗ�նȂ����� ������ �ռ������: ���Ιz�y�� 2 Pi ���L: 320 - 950 nm �z�y��: 256 channel silicon photodiode array ���V�ɘ�: 3.3nm/pixel ���V����: 0.3nm ���Hʹ��ͨ��: 190 ����Ͷ�(4 ms integration time): 20 W m-2 nm-1 (at 400nm) 12 W m-2 nm-1 (at 500nm) 15 W m-2 nm-1 (at 700nm) ����NEI(8 sec integration time): 0.8 µW m-2 nm-1 (at 400nm) 0.6 µW m-2 nm-1 (at 500nm) 0.8 µW m-2 nm-1 (at 700nm)
